Theory of photoemission from cesium antimonide using an alpha-semiconductor model

A model of photoemission from cesium antimonide ( Cs 3 Sb ) that does not rely on adjustable parameters is proposed and compared to the experimental data of Spicer [ Phys. Rev. 112 , 114 ( 1958 )] and Taft and Philipp [ Phys. Rev. 115 , 1583 ( 1959 )] . It relies on the following components for the evaluation of all relevant parameters: (i) a multidimensional evaluation of the escape probability from a step-function surface barrier, (ii) scattering rates determined using a recently developed alpha-semiconductor model, and (iii) evaluation of the complex refractive index using a harmonic oscillator model for the evaluation of reflectivity and extinction coefficient.