p -channel thin-film transistor using p -type oxide semiconductor, SnO
This paper reports that among known p -type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good p -type oxide thin-film transistors (TFTs). Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at 575 ° C by pulsed laser deposi...
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| Veröffentlicht in: | Applied physics letters 2008-07, Vol.93 (3), p.032113-032113-3 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | This paper reports that among known
p
-type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good
p
-type oxide thin-film transistors (TFTs). Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at
575
°
C
by pulsed laser deposition. These exhibited a Hall mobility of
2.4
cm
2
V
−
1
s
−
1
at room temperature. Top-gated TFTs, using epitaxial SnO channels, exhibited field-effect mobilities of
1.3
cm
2
V
−
1
s
−
1
, on/off current ratios of
∼
10
2
, and threshold voltages of
4.8
V
. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2964197 |