Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocatio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2008-07, Vol.93 (3)
Hauptverfasser:	Chen, Bin, Chen, Jun, Sekiguchi, Takashi, Ohyanagi, Takasumi, Matsuhata, Hirofumi, Kinoshita, Akimasa, Okumura, Hajime, Fabbri, Filippo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!