Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocatio...

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Veröffentlicht in:Applied physics letters 2008-07, Vol.93 (3)
Hauptverfasser: Chen, Bin, Chen, Jun, Sekiguchi, Takashi, Ohyanagi, Takasumi, Matsuhata, Hirofumi, Kinoshita, Akimasa, Okumura, Hajime, Fabbri, Filippo
Format: Artikel
Sprache:eng
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Zusammenfassung:Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocations [Si(g) 30° and C(g) 30° partials], with a stacking fault between them. The EBIC contrast of C(g) 30° partial is always several percent higher than that of Si(g) 30° partial. The stacking fault is brighter than the background, having the negative EBIC contrast. CL spectrum shows that a new peak (417nm) appears at stacking fault position. The origin of bright stacking fault in EBIC image is discussed according to its quantum-well state.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2960339