Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode
Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocatio...
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Veröffentlicht in: | Applied physics letters 2008-07, Vol.93 (3) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocations [Si(g) 30° and C(g) 30° partials], with a stacking fault between them. The EBIC contrast of C(g) 30° partial is always several percent higher than that of Si(g) 30° partial. The stacking fault is brighter than the background, having the negative EBIC contrast. CL spectrum shows that a new peak (417nm) appears at stacking fault position. The origin of bright stacking fault in EBIC image is discussed according to its quantum-well state. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2960339 |