Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocatio...

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Veröffentlicht in:Applied physics letters 2008-07, Vol.93 (3)
Hauptverfasser: Chen, Bin, Chen, Jun, Sekiguchi, Takashi, Ohyanagi, Takasumi, Matsuhata, Hirofumi, Kinoshita, Akimasa, Okumura, Hajime, Fabbri, Filippo
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container_issue 3
container_start_page
container_title Applied physics letters
container_volume 93
creator Chen, Bin
Chen, Jun
Sekiguchi, Takashi
Ohyanagi, Takasumi
Matsuhata, Hirofumi
Kinoshita, Akimasa
Okumura, Hajime
Fabbri, Filippo
description Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocations [Si(g) 30° and C(g) 30° partials], with a stacking fault between them. The EBIC contrast of C(g) 30° partial is always several percent higher than that of Si(g) 30° partial. The stacking fault is brighter than the background, having the negative EBIC contrast. CL spectrum shows that a new peak (417nm) appears at stacking fault position. The origin of bright stacking fault in EBIC image is discussed according to its quantum-well state.
doi_str_mv 10.1063/1.2960339
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title Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode
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