High mobility electron-conducting thin-film transistors by organic vapor phase deposition

In this letter, we report on the growth of thin films of N , N ′ -ditridecylperylene- 3,4,9,10-tetracarboxylic diimide ( PTCDI - C 13 H 27 ) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59 ± 4 % and deposition rates up to 15 Å ∕ s . Top-contact transistors based on OVPD-grown PTCDI - C 13 H 27 show high n -type mobilities (up to 0.3 cm 2 ∕ V s ) and reproducible characteristics. The influence of deposition parameters on electrical properties is discussed.