Pockel’s effect and optical rectification in (111)-cut near-intrinsic silicon crystals
Pockel’s effect and optical rectification are demonstrated in the charge space region of a (111)-cut near-intrinsic silicon crystal by the use of a planar metal-insulator-semiconductor structure. The results show that both Pockel’s effect and optical rectification are so considerable that these effe...
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Veröffentlicht in: | Applied physics letters 2008-06, Vol.92 (25) |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Pockel’s effect and optical rectification are demonstrated in the charge space region of a (111)-cut near-intrinsic silicon crystal by the use of a planar metal-insulator-semiconductor structure. The results show that both Pockel’s effect and optical rectification are so considerable that these effects should be taken into account for designing silicon-based photonic devices. The anisotropy of optical rectification is measured too, and experimental results are in good accordance with the theoretical analysis. These effects can also be used as a tool to investigate the properties of the charge space region of silicon devices in future. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2952462 |