Pockel’s effect and optical rectification in (111)-cut near-intrinsic silicon crystals

Pockel’s effect and optical rectification are demonstrated in the charge space region of a (111)-cut near-intrinsic silicon crystal by the use of a planar metal-insulator-semiconductor structure. The results show that both Pockel’s effect and optical rectification are so considerable that these effe...

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Veröffentlicht in:Applied physics letters 2008-06, Vol.92 (25)
Hauptverfasser: Chen, Zhanguo, Zhao, Jianxun, Zhang, Yuhong, Jia, Gang, Liu, Xiuhuan, Ren, Ce, Wu, Wenqing, Sun, Jianbo, Cao, Kun, Wang, Shuang, Shi, Bao
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Sprache:eng
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Zusammenfassung:Pockel’s effect and optical rectification are demonstrated in the charge space region of a (111)-cut near-intrinsic silicon crystal by the use of a planar metal-insulator-semiconductor structure. The results show that both Pockel’s effect and optical rectification are so considerable that these effects should be taken into account for designing silicon-based photonic devices. The anisotropy of optical rectification is measured too, and experimental results are in good accordance with the theoretical analysis. These effects can also be used as a tool to investigate the properties of the charge space region of silicon devices in future.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2952462