Power scaling of an extreme ultraviolet light source for future lithography
For future lithography applications, high-power extreme ultraviolet (EUV) light sources are needed at a central wavelength of 13.5 nm within 2% bandwidth. We have demonstrated that from a physics point of view the Philips alpha-prototype source concept is scalable up to the power levels required for...
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Veröffentlicht in: | Applied physics letters 2008-05, Vol.92 (18), p.181501-181501-3 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | For future lithography applications, high-power extreme ultraviolet (EUV) light sources are needed at a central wavelength of
13.5
nm
within 2% bandwidth. We have demonstrated that from a physics point of view the Philips alpha-prototype source concept is scalable up to the power levels required for high-volume manufacturing (HVM) purposes. Scalability is shown both in frequency, up to
100
kHz
, and pulse energy, up to
55
mJ
collectable EUV per pulse, which allows us to find an optimal working point for future HVM sources within a wide parameter space. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2924299 |