Power scaling of an extreme ultraviolet light source for future lithography

For future lithography applications, high-power extreme ultraviolet (EUV) light sources are needed at a central wavelength of 13.5 nm within 2% bandwidth. We have demonstrated that from a physics point of view the Philips alpha-prototype source concept is scalable up to the power levels required for...

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Veröffentlicht in:Applied physics letters 2008-05, Vol.92 (18), p.181501-181501-3
Hauptverfasser: Wagenaars, Erik, Küpper, Felix, Klein, Jürgen, Neff, Willi, Damen, Marcel, van der Wel, Pieter, Vaudrevange, Dominik, Jonkers, Jeroen
Format: Artikel
Sprache:eng
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Zusammenfassung:For future lithography applications, high-power extreme ultraviolet (EUV) light sources are needed at a central wavelength of 13.5 nm within 2% bandwidth. We have demonstrated that from a physics point of view the Philips alpha-prototype source concept is scalable up to the power levels required for high-volume manufacturing (HVM) purposes. Scalability is shown both in frequency, up to 100 kHz , and pulse energy, up to 55 mJ collectable EUV per pulse, which allows us to find an optimal working point for future HVM sources within a wide parameter space.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2924299