Saturation of intersubband transitions in p-doped GaAs∕AlGaAs quantum wells
Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs∕AlGaAs quantum wells. The transitions had energies of 183 and 160meV and the measured population relaxation times were 2±1.5 and 0.3±0.1ps, respectively. Modeling of the quantum well...
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Veröffentlicht in: | Applied physics letters 2008-05, Vol.92 (18) |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs∕AlGaAs quantum wells. The transitions had energies of 183 and 160meV and the measured population relaxation times were 2±1.5 and 0.3±0.1ps, respectively. Modeling of the quantum wells with a 6×6 k⋅p method shows that intersubband scattering by LO phonons can account for these relaxation times. The valence bandstructure is typically more complicated than the conduction bandstructure in a quantum well but these measurements show that LO phonons are the dominant intersubband scattering mechanism in both cases. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2920706 |