Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si0.5Ge0.5). The deposited film was annealed in oxygen ambient at 650°C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron micros...
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Veröffentlicht in: | Applied physics letters 2008-04, Vol.92 (15) |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si0.5Ge0.5). The deposited film was annealed in oxygen ambient at 650°C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide-silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2908916 |