Electron beam induced current profiling of ZnO p - n homojunctions

Variable temperature electron beam induced current technique was employed for the profiling of ZnO p - n homojunctions and the extraction of minority electron diffusion length values in the Sb-doped p -type ZnO region. A thermally induced increase for diffusion length of minority electrons was determined to have an activation energy of ∼ 145 meV . The latter parameter likely represents carrier delocalization energy and determines the increase of the diffusion length due to the reduction in recombination efficiency.