The electronic structure of surface chains in the layered semiconductor In4Se3(100)

The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with ∼1eV ban...

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Veröffentlicht in:Applied physics letters 2008-03, Vol.92 (12)
Hauptverfasser: Losovyj, Ya. B., Klinke, Melanie, Cai, En, Rodriguez, Idaykis, Zhang, Jiandi, Makinistian, L., Petukhov, A. G., Albanesi, E. A., Galiy, P., Fiyala, Ya, Liu, Jing, Dowben, P. A.
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Sprache:eng
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Zusammenfassung:The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with ∼1eV band width along the In chain direction. The dispersion of this band is largely due to the hybridization of In-s and Se-p orbitals, but the hybridization between In-s and Se-p and In-p and Se-p orbitals is also critical in establishing the band gap.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2894577