The electronic structure of surface chains in the layered semiconductor In4Se3(100)
The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with ∼1eV ban...
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Veröffentlicht in: | Applied physics letters 2008-03, Vol.92 (12) |
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Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with ∼1eV band width along the In chain direction. The dispersion of this band is largely due to the hybridization of In-s and Se-p orbitals, but the hybridization between In-s and Se-p and In-p and Se-p orbitals is also critical in establishing the band gap. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2894577 |