Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy
Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650°C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoe...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2008-03, Vol.92 (9) |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 9 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 92 |
| creator | Bourlange, A. Payne, D. J. Egdell, R. G. Foord, J. S. Edwards, P. P. Jones, M. O. Schertel, A. Dobson, P. J. Hutchison, J. L. |
| description | Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650°C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75eV for the fundamental bandgap of In2O3 and suggests a revised value of 2.67eV. |
| doi_str_mv | 10.1063/1.2889500 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2889500</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2889500</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-c3ccb9fe515d3e0a20ecd76daa8901ee43d0db912db1d6dddece60305baf5e3d3</originalsourceid><addsrcrecordid>eNotkDtLA0EURgdRMEYL_8GUpph471xnH6UEjYHANlqYZpnHXVzZzYaZFY2_3khSfXwcOMUR4hZhjpDRPc51UZQG4ExMEPJcEWJxLiYAQCorDV6Kq5Q-D9dooonYLOPwPX7IoZGrra7oDgFmctjKd5VG69qu_eUgN7HSR-L2slK7zqbeSptSm8YD7oeO_Vdno3Rse8m7drQ_-2tx0dgu8c1pp-Lt-el18aLW1XK1eFwrr7UZlSfvXdmwQROIwWpgH_IsWFuUgMwPFCC4EnVwGLIQAnvOgMA42ximQFMxO3p9HFKK3NS72PY27muE-j9KjfUpCv0BTXBS-w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Bourlange, A. ; Payne, D. J. ; Egdell, R. G. ; Foord, J. S. ; Edwards, P. P. ; Jones, M. O. ; Schertel, A. ; Dobson, P. J. ; Hutchison, J. L.</creator><creatorcontrib>Bourlange, A. ; Payne, D. J. ; Egdell, R. G. ; Foord, J. S. ; Edwards, P. P. ; Jones, M. O. ; Schertel, A. ; Dobson, P. J. ; Hutchison, J. L.</creatorcontrib><description>Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650°C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75eV for the fundamental bandgap of In2O3 and suggests a revised value of 2.67eV.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2889500</identifier><language>eng</language><ispartof>Applied physics letters, 2008-03, Vol.92 (9)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-c3ccb9fe515d3e0a20ecd76daa8901ee43d0db912db1d6dddece60305baf5e3d3</citedby><cites>FETCH-LOGICAL-c225t-c3ccb9fe515d3e0a20ecd76daa8901ee43d0db912db1d6dddece60305baf5e3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Bourlange, A.</creatorcontrib><creatorcontrib>Payne, D. J.</creatorcontrib><creatorcontrib>Egdell, R. G.</creatorcontrib><creatorcontrib>Foord, J. S.</creatorcontrib><creatorcontrib>Edwards, P. P.</creatorcontrib><creatorcontrib>Jones, M. O.</creatorcontrib><creatorcontrib>Schertel, A.</creatorcontrib><creatorcontrib>Dobson, P. J.</creatorcontrib><creatorcontrib>Hutchison, J. L.</creatorcontrib><title>Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy</title><title>Applied physics letters</title><description>Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650°C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75eV for the fundamental bandgap of In2O3 and suggests a revised value of 2.67eV.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkDtLA0EURgdRMEYL_8GUpph471xnH6UEjYHANlqYZpnHXVzZzYaZFY2_3khSfXwcOMUR4hZhjpDRPc51UZQG4ExMEPJcEWJxLiYAQCorDV6Kq5Q-D9dooonYLOPwPX7IoZGrra7oDgFmctjKd5VG69qu_eUgN7HSR-L2slK7zqbeSptSm8YD7oeO_Vdno3Rse8m7drQ_-2tx0dgu8c1pp-Lt-el18aLW1XK1eFwrr7UZlSfvXdmwQROIwWpgH_IsWFuUgMwPFCC4EnVwGLIQAnvOgMA42ximQFMxO3p9HFKK3NS72PY27muE-j9KjfUpCv0BTXBS-w</recordid><startdate>20080303</startdate><enddate>20080303</enddate><creator>Bourlange, A.</creator><creator>Payne, D. J.</creator><creator>Egdell, R. G.</creator><creator>Foord, J. S.</creator><creator>Edwards, P. P.</creator><creator>Jones, M. O.</creator><creator>Schertel, A.</creator><creator>Dobson, P. J.</creator><creator>Hutchison, J. L.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080303</creationdate><title>Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy</title><author>Bourlange, A. ; Payne, D. J. ; Egdell, R. G. ; Foord, J. S. ; Edwards, P. P. ; Jones, M. O. ; Schertel, A. ; Dobson, P. J. ; Hutchison, J. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-c3ccb9fe515d3e0a20ecd76daa8901ee43d0db912db1d6dddece60305baf5e3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bourlange, A.</creatorcontrib><creatorcontrib>Payne, D. J.</creatorcontrib><creatorcontrib>Egdell, R. G.</creatorcontrib><creatorcontrib>Foord, J. S.</creatorcontrib><creatorcontrib>Edwards, P. P.</creatorcontrib><creatorcontrib>Jones, M. O.</creatorcontrib><creatorcontrib>Schertel, A.</creatorcontrib><creatorcontrib>Dobson, P. J.</creatorcontrib><creatorcontrib>Hutchison, J. L.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bourlange, A.</au><au>Payne, D. J.</au><au>Egdell, R. G.</au><au>Foord, J. S.</au><au>Edwards, P. P.</au><au>Jones, M. O.</au><au>Schertel, A.</au><au>Dobson, P. J.</au><au>Hutchison, J. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>2008-03-03</date><risdate>2008</risdate><volume>92</volume><issue>9</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650°C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75eV for the fundamental bandgap of In2O3 and suggests a revised value of 2.67eV.</abstract><doi>10.1063/1.2889500</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-03, Vol.92 (9) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2889500 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T18%3A09%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20In2O3(100)%20on%20Y-stabilized%20ZrO2(100)%20by%20O-plasma%20assisted%20molecular%20beam%20epitaxy&rft.jtitle=Applied%20physics%20letters&rft.au=Bourlange,%20A.&rft.date=2008-03-03&rft.volume=92&rft.issue=9&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2889500&rft_dat=%3Ccrossref%3E10_1063_1_2889500%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |