Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650°C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoe...

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Veröffentlicht in:Applied physics letters 2008-03, Vol.92 (9)
Hauptverfasser: Bourlange, A., Payne, D. J., Egdell, R. G., Foord, J. S., Edwards, P. P., Jones, M. O., Schertel, A., Dobson, P. J., Hutchison, J. L.
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Sprache:eng
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Zusammenfassung:Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650°C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75eV for the fundamental bandgap of In2O3 and suggests a revised value of 2.67eV.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2889500