Visible photoluminescence from plasma-synthesized SiO2-buffered SiNx films: Effect of film thickness and annealing temperature

The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from SiNx films synthesized by plasma-assisted radio frequency magnetron sputtering on SiO2 buffer layers is investigated. It is shown that strong visible PL is achieved at annealing temperatures above 6...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2008-03, Vol.103 (5)
Hauptverfasser:	Xu, M., Xu, S., Chai, J. W., Long, J. D., Cheng, Q. J., Ee, Y. C., Ostrikov, K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!