Visible photoluminescence from plasma-synthesized SiO2-buffered SiNx films: Effect of film thickness and annealing temperature

The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from SiNx films synthesized by plasma-assisted radio frequency magnetron sputtering on SiO2 buffer layers is investigated. It is shown that strong visible PL is achieved at annealing temperatures above 6...

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Veröffentlicht in:Journal of applied physics 2008-03, Vol.103 (5)
Hauptverfasser: Xu, M., Xu, S., Chai, J. W., Long, J. D., Cheng, Q. J., Ee, Y. C., Ostrikov, K.
Format: Artikel
Sprache:eng
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Zusammenfassung:The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from SiNx films synthesized by plasma-assisted radio frequency magnetron sputtering on SiO2 buffer layers is investigated. It is shown that strong visible PL is achieved at annealing temperatures above 650°C. The optimum annealing temperature for the maximum PL yield strongly depends on the film thickness and varies from 800to1200°C. A comparative composition-structure-property analysis reveals that the PL intensity is directly related to the content of the Si–O and Si–N bonds in the SiNx films. Therefore, sufficient oxidation and moderate nitridation of SiNx∕SiO2 films during the plasma-based growth process are crucial for a strong PL yield. Excessively high annealing temperatures lead to weakened Si–N bonds in thinner SiNx films, which eventually results in a lower PL intensity.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2884531