Short exciton radiative lifetime in submonolayer InGaAs∕GaAs quantum dots

The exciton radiative lifetime in submonolayer (SML) InGaAs∕GaAs quantum dots (QDs) grown at 500°C was measured by using time-resolved photoluminescence from 10to260K. The radiative lifetime is around 90ps and is independent of temperature below 50K. The observed short radiative lifetime is a key re...

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Veröffentlicht in:Applied physics letters 2008-02, Vol.92 (6)
Hauptverfasser: Xu, Zhangcheng, Zhang, Yating, Tackeuchi, Atsushi, Horikoshi, Yoshiji, Hvam, Jørn M.
Format: Artikel
Sprache:eng
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Zusammenfassung:The exciton radiative lifetime in submonolayer (SML) InGaAs∕GaAs quantum dots (QDs) grown at 500°C was measured by using time-resolved photoluminescence from 10to260K. The radiative lifetime is around 90ps and is independent of temperature below 50K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30nm in diameter and embedded within the lateral InGaAs QW.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2839312