Short exciton radiative lifetime in submonolayer InGaAs∕GaAs quantum dots
The exciton radiative lifetime in submonolayer (SML) InGaAs∕GaAs quantum dots (QDs) grown at 500°C was measured by using time-resolved photoluminescence from 10to260K. The radiative lifetime is around 90ps and is independent of temperature below 50K. The observed short radiative lifetime is a key re...
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Veröffentlicht in: | Applied physics letters 2008-02, Vol.92 (6) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The exciton radiative lifetime in submonolayer (SML) InGaAs∕GaAs quantum dots (QDs) grown at 500°C was measured by using time-resolved photoluminescence from 10to260K. The radiative lifetime is around 90ps and is independent of temperature below 50K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30nm in diameter and embedded within the lateral InGaAs QW. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2839312 |