Anomalous Hall effect in anatase Ti1−xCoxO2−δ above room temperature

Presence of spin polarized electrons was confirmed by observing anomalous Hall effect in a ferromagnetic semiconductor anatase Ti1−xCoxO2−δ up to 600K. The anomalous Hall resistivity exhibited apparent ferromagnetic hysteresis loop from 300to600K with insignificant change in the magnitude, indicatin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2008-04, Vol.103 (7)
Hauptverfasser: Ueno, K., Fukumura, T., Toyosaki, H., Nakano, M., Yamasaki, T., Yamada, Y., Kawasaki, M.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Presence of spin polarized electrons was confirmed by observing anomalous Hall effect in a ferromagnetic semiconductor anatase Ti1−xCoxO2−δ up to 600K. The anomalous Hall resistivity exhibited apparent ferromagnetic hysteresis loop from 300to600K with insignificant change in the magnitude, indicating that the Curie temperature is higher than 600K. The measurements above 500K induced an annealing effect represented by the decrease in resistivity, whereas kept the anomalous Hall resistivity nearly constant.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2834247