Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices
Cobalt-silicide ( Co Si 2 ) nanocrystals (NCs) were investigated for use in charge storage for metal oxide semiconductor (MOS) devices with thin Hf O 2 tunneling and control oxide layers. Co Si 2 NCs were synthesized by exposure of Co ∕ Si ∕ Hf O 2 tunneling oxide/Si stacks to an external UV laser....
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| Veröffentlicht in: | Applied physics letters 2008-01, Vol.92 (1), p.013512-013512-3 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Cobalt-silicide
(
Co
Si
2
)
nanocrystals (NCs) were investigated for use in charge storage for metal oxide semiconductor (MOS) devices with thin
Hf
O
2
tunneling and control oxide layers.
Co
Si
2
NCs were synthesized by exposure of
Co
∕
Si
∕
Hf
O
2
tunneling oxide/Si stacks to an external UV laser. Observations from transmission electron microscopy and x-ray photoelectron spectroscopy clearly confirm the formation of
Co
Si
2
NCs and the values of Co-Si bonding energies that are shifted
0.3
eV
from original values, respectively. The
Co
Si
2
NCs in MOS devices exhibited a large memory window of
3.4
V
as well as efficient programming/erasing speeds, good retention, and endurance times. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2831667 |