Single shot charge detection using a radio-frequency quantum point contact

We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4K and millikelvin temperatures and found to have a bandwidth exceeding 20MHz. For single shot charge sensing, we achieve a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2007-11, Vol.91 (22)
Hauptverfasser: Cassidy, M. C., Dzurak, A. S., Clark, R. G., Petersson, K. D., Farrer, I., Ritchie, D. A., Smith, C. G.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4K and millikelvin temperatures and found to have a bandwidth exceeding 20MHz. For single shot charge sensing, we achieve a charge sensitivity of ∼2×10−4e∕Hz referred to the neighboring dot’s charge. The rf-QPC compares favorably with rf single electron transistor electrometers and promises to be an extremely useful tool for characterizing and measuring semiconductor quantum systems on fast time scales.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2809370