InGaAs quantum wire infrared photodetector
We report a 20-layer In x Ga 1 − x As ∕ In 0.52 Al 0.24 Ga 0.24 As quantum wire infrared photodetector grown on (001)-axis InP substrate by molecular beam epitaxy. High density InGaAs quantum wires were formed, utilizing the strained-induced lateral-layer ordering process by growing a strain-balance...
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| Veröffentlicht in: | Applied physics letters 2007-10, Vol.91 (18), p.181105-181105-3 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | We report a 20-layer
In
x
Ga
1
−
x
As
∕
In
0.52
Al
0.24
Ga
0.24
As
quantum wire infrared photodetector grown on (001)-axis InP substrate by molecular beam epitaxy. High density InGaAs quantum wires were formed, utilizing the strained-induced lateral-layer ordering process by growing a strain-balanced
(
Ga
As
)
1.80
∕
(
In
As
)
2.35
short-period superlattice. This device shows a unique polarized photoresponse which favors the normal-incident infrared radiation polarizing perpendicular to the wire orientation. The photoresponse at
6.3
μ
m
exhibited a peak detectivity of
3.13
×
10
9
cm
Hz
1
∕
2
∕
W
at
10
K
. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2805224 |