Surface plasmon assisted photoluminescence in GaAs-AlGaAs quantum well microstructures
Surface plasmon resonance has been investigated in a quantum well (QW) GaAs microstructure the photoluminescence (PL) of which is coupled via a submicrometer period grating with surface plasmons (SPs) propagating at Si O 2 - Au -dielectric interfaces. Introduction of the Si O 2 layer allowed to incr...
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| Veröffentlicht in: | Applied physics letters 2007-10, Vol.91 (16), p.163106-163106-3 |
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| container_end_page | 163106-3 |
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| container_title | Applied physics letters |
| container_volume | 91 |
| creator | Lepage, Dominic Dubowski, Jan J. |
| description | Surface plasmon resonance has been investigated in a quantum well (QW) GaAs microstructure the photoluminescence (PL) of which is coupled via a submicrometer period grating with surface plasmons (SPs) propagating at
Si
O
2
-
Au
-dielectric interfaces. Introduction of the
Si
O
2
layer allowed to increase both the propagation length and the penetration depth of SPs and, consequently, achieve their enhanced interaction with the QW PL signal. For a QW
Ga
As
-
Al
0.5
Ga
0.5
As
microstructure emitting at
822
nm
, a modulated PL emission has been observed in agreement with the calculated resonance conditions expected for such a microstructure and the
375
nm
period grating. |
| doi_str_mv | 10.1063/1.2798253 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2798253</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-9e10fc14086852306bf3b2da4684c138cd20fb482d007fd13a411959273205db3</originalsourceid><addsrcrecordid>eNp1kEtLxDAUhYMoOI4u_AfZuuh4b9JHuhGGQWeEARc-tiFNE4z0ZZIi_ntbpltXhwMf9x4-Qm4RNgg5v8cNK0rBMn5GVghFkXBEcU5WAMCTvMzwklyF8DXVjHG-Ih-vo7dKGzo0KrR9R1UILkRT0-Gzj30ztq4zQZtuQlxH92obkm0zB_0eVRfHlv6YpqGt074P0Y86jt6Ea3JhVRPMzZJr8v70-LY7JMeX_fNue0w0E2lMSoNgNaYgcjHtgbyyvGK1SnORauRC1wxslQpWAxS2Rq5SxDIrWcEZZHXF1-TudHf-HryxcvCuVf5XIshZiES5CJnYhxMbtIsqur77H16syMWKnK3wPwHeaJw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Surface plasmon assisted photoluminescence in GaAs-AlGaAs quantum well microstructures</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Lepage, Dominic ; Dubowski, Jan J.</creator><creatorcontrib>Lepage, Dominic ; Dubowski, Jan J.</creatorcontrib><description>Surface plasmon resonance has been investigated in a quantum well (QW) GaAs microstructure the photoluminescence (PL) of which is coupled via a submicrometer period grating with surface plasmons (SPs) propagating at
Si
O
2
-
Au
-dielectric interfaces. Introduction of the
Si
O
2
layer allowed to increase both the propagation length and the penetration depth of SPs and, consequently, achieve their enhanced interaction with the QW PL signal. For a QW
Ga
As
-
Al
0.5
Ga
0.5
As
microstructure emitting at
822
nm
, a modulated PL emission has been observed in agreement with the calculated resonance conditions expected for such a microstructure and the
375
nm
period grating.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2798253</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-10, Vol.91 (16), p.163106-163106-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-9e10fc14086852306bf3b2da4684c138cd20fb482d007fd13a411959273205db3</citedby><cites>FETCH-LOGICAL-c284t-9e10fc14086852306bf3b2da4684c138cd20fb482d007fd13a411959273205db3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2798253$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,778,782,792,1556,4500,27911,27912,76141,76147</link.rule.ids></links><search><creatorcontrib>Lepage, Dominic</creatorcontrib><creatorcontrib>Dubowski, Jan J.</creatorcontrib><title>Surface plasmon assisted photoluminescence in GaAs-AlGaAs quantum well microstructures</title><title>Applied physics letters</title><description>Surface plasmon resonance has been investigated in a quantum well (QW) GaAs microstructure the photoluminescence (PL) of which is coupled via a submicrometer period grating with surface plasmons (SPs) propagating at
Si
O
2
-
Au
-dielectric interfaces. Introduction of the
Si
O
2
layer allowed to increase both the propagation length and the penetration depth of SPs and, consequently, achieve their enhanced interaction with the QW PL signal. For a QW
Ga
As
-
Al
0.5
Ga
0.5
As
microstructure emitting at
822
nm
, a modulated PL emission has been observed in agreement with the calculated resonance conditions expected for such a microstructure and the
375
nm
period grating.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLxDAUhYMoOI4u_AfZuuh4b9JHuhGGQWeEARc-tiFNE4z0ZZIi_ntbpltXhwMf9x4-Qm4RNgg5v8cNK0rBMn5GVghFkXBEcU5WAMCTvMzwklyF8DXVjHG-Ih-vo7dKGzo0KrR9R1UILkRT0-Gzj30ztq4zQZtuQlxH92obkm0zB_0eVRfHlv6YpqGt074P0Y86jt6Ea3JhVRPMzZJr8v70-LY7JMeX_fNue0w0E2lMSoNgNaYgcjHtgbyyvGK1SnORauRC1wxslQpWAxS2Rq5SxDIrWcEZZHXF1-TudHf-HryxcvCuVf5XIshZiES5CJnYhxMbtIsqur77H16syMWKnK3wPwHeaJw</recordid><startdate>20071015</startdate><enddate>20071015</enddate><creator>Lepage, Dominic</creator><creator>Dubowski, Jan J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20071015</creationdate><title>Surface plasmon assisted photoluminescence in GaAs-AlGaAs quantum well microstructures</title><author>Lepage, Dominic ; Dubowski, Jan J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-9e10fc14086852306bf3b2da4684c138cd20fb482d007fd13a411959273205db3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lepage, Dominic</creatorcontrib><creatorcontrib>Dubowski, Jan J.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lepage, Dominic</au><au>Dubowski, Jan J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface plasmon assisted photoluminescence in GaAs-AlGaAs quantum well microstructures</atitle><jtitle>Applied physics letters</jtitle><date>2007-10-15</date><risdate>2007</risdate><volume>91</volume><issue>16</issue><spage>163106</spage><epage>163106-3</epage><pages>163106-163106-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Surface plasmon resonance has been investigated in a quantum well (QW) GaAs microstructure the photoluminescence (PL) of which is coupled via a submicrometer period grating with surface plasmons (SPs) propagating at
Si
O
2
-
Au
-dielectric interfaces. Introduction of the
Si
O
2
layer allowed to increase both the propagation length and the penetration depth of SPs and, consequently, achieve their enhanced interaction with the QW PL signal. For a QW
Ga
As
-
Al
0.5
Ga
0.5
As
microstructure emitting at
822
nm
, a modulated PL emission has been observed in agreement with the calculated resonance conditions expected for such a microstructure and the
375
nm
period grating.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2798253</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2007-10, Vol.91 (16), p.163106-163106-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2798253 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Surface plasmon assisted photoluminescence in GaAs-AlGaAs quantum well microstructures |
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