Surface plasmon assisted photoluminescence in GaAs-AlGaAs quantum well microstructures

Surface plasmon resonance has been investigated in a quantum well (QW) GaAs microstructure the photoluminescence (PL) of which is coupled via a submicrometer period grating with surface plasmons (SPs) propagating at Si O 2 - Au -dielectric interfaces. Introduction of the Si O 2 layer allowed to increase both the propagation length and the penetration depth of SPs and, consequently, achieve their enhanced interaction with the QW PL signal. For a QW Ga As - Al 0.5 Ga 0.5 As microstructure emitting at 822 nm , a modulated PL emission has been observed in agreement with the calculated resonance conditions expected for such a microstructure and the 375 nm period grating.