Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium
The charge state of mobile vacancy-impurity complexes in germanium was studied via the effect of p-type (Ga) doping on Ga and Sn diffusions. Tin diffusion retards significantly as a function of doping concentration suggesting diffusion dominated by negatively charged vacancy-Sn complexes. Gallium di...
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Veröffentlicht in: | Applied physics letters 2007-08, Vol.91 (9) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The charge state of mobile vacancy-impurity complexes in germanium was studied via the effect of p-type (Ga) doping on Ga and Sn diffusions. Tin diffusion retards significantly as a function of doping concentration suggesting diffusion dominated by negatively charged vacancy-Sn complexes. Gallium diffusion is practically unaffected by doping, suggesting diffusion dominated by vacancy-Ga complexes having the same charge state as isolated, negatively charged Ga ions. The evident two orders of magnitude higher diffusivity of group V elements in germanium than of group III and IV elements can be well explicated by means of the present findings. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2778540 |