Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium

The charge state of mobile vacancy-impurity complexes in germanium was studied via the effect of p-type (Ga) doping on Ga and Sn diffusions. Tin diffusion retards significantly as a function of doping concentration suggesting diffusion dominated by negatively charged vacancy-Sn complexes. Gallium di...

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Veröffentlicht in:Applied physics letters 2007-08, Vol.91 (9)
Hauptverfasser: Riihimäki, I., Virtanen, A., Rinta-Anttila, S., Pusa, P., Räisänen, J., ISOLDE Collaboration, The
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Sprache:eng
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Zusammenfassung:The charge state of mobile vacancy-impurity complexes in germanium was studied via the effect of p-type (Ga) doping on Ga and Sn diffusions. Tin diffusion retards significantly as a function of doping concentration suggesting diffusion dominated by negatively charged vacancy-Sn complexes. Gallium diffusion is practically unaffected by doping, suggesting diffusion dominated by vacancy-Ga complexes having the same charge state as isolated, negatively charged Ga ions. The evident two orders of magnitude higher diffusivity of group V elements in germanium than of group III and IV elements can be well explicated by means of the present findings.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2778540