Observation of type-I and type-II excitons in strained Si∕SiGe quantum-well structures

The authors report photoluminescence (PL) measurement on a series of Si∕SiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exc...

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Veröffentlicht in:Applied physics letters 2007-08, Vol.91 (7)
Hauptverfasser: Wang, K. Y., Huang, W. P., Cheng, H. H., Sun, G., Soref, R. A., Nicholas, R. J., Suen, Y. W.
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Sprache:eng
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Zusammenfassung:The authors report photoluminescence (PL) measurement on a series of Si∕SiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment—desired for electroluminescent devices—can be achieved by strain engineering.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2771094