Observation of type-I and type-II excitons in strained Si∕SiGe quantum-well structures
The authors report photoluminescence (PL) measurement on a series of Si∕SiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exc...
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Veröffentlicht in: | Applied physics letters 2007-08, Vol.91 (7) |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The authors report photoluminescence (PL) measurement on a series of Si∕SiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment—desired for electroluminescent devices—can be achieved by strain engineering. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2771094 |