Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

The authors found that capacitance of polycrystalline spinel Fe V 2 O 4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field ( ∼ 1000 G ) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.