Diffusion of nitrogen molecules in amorphous SiO2

Diffusion of nitrogen molecules in amorphous SiO2

Nitrogen molecules (N2) are incorporated in interstitial voids in amorphous silica (a-SiO2) thermally annealed in N2 atmosphere. The Raman band associated with the infrared N–N stretching mode of interstitial N2 (Q band) is located at ∼2325cm−1 and is shifted to low energy compared to that of N2 mol...

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Veröffentlicht in:Applied physics letters 2007-08, Vol.91 (7)
Hauptverfasser: Kajihara, Koichi, Hirano, Masahiro, Takimoto, Yasuyuki, Skuja, Linards, Hosono, Hideo
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Takimoto, Yasuyuki
Skuja, Linards
Hosono, Hideo
description Nitrogen molecules (N2) are incorporated in interstitial voids in amorphous silica (a-SiO2) thermally annealed in N2 atmosphere. The Raman band associated with the infrared N–N stretching mode of interstitial N2 (Q band) is located at ∼2325cm−1 and is shifted to low energy compared to that of N2 molecules in air (∼2330cm−1). From depth profiling of the Raman band intensity in the samples thermally annealed at 800, 900, or 1000°C, the authors determined the diffusion coefficient and solubility of N2 in a-SiO2 as 1.3×10−4±0.5exp(−1.28±0.1eV∕kT)cm2s−1 and 7.0×1015±0.5exp(0.07±0.1eV∕kT)cm−3atm−1, respectively.
doi_str_mv 10.1063/1.2770796
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title Diffusion of nitrogen molecules in amorphous SiO2
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