Diffusion of nitrogen molecules in amorphous SiO2
Nitrogen molecules (N2) are incorporated in interstitial voids in amorphous silica (a-SiO2) thermally annealed in N2 atmosphere. The Raman band associated with the infrared N–N stretching mode of interstitial N2 (Q band) is located at ∼2325cm−1 and is shifted to low energy compared to that of N2 mol...
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Veröffentlicht in: | Applied physics letters 2007-08, Vol.91 (7) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Nitrogen molecules (N2) are incorporated in interstitial voids in amorphous silica (a-SiO2) thermally annealed in N2 atmosphere. The Raman band associated with the infrared N–N stretching mode of interstitial N2 (Q band) is located at ∼2325cm−1 and is shifted to low energy compared to that of N2 molecules in air (∼2330cm−1). From depth profiling of the Raman band intensity in the samples thermally annealed at 800, 900, or 1000°C, the authors determined the diffusion coefficient and solubility of N2 in a-SiO2 as 1.3×10−4±0.5exp(−1.28±0.1eV∕kT)cm2s−1 and 7.0×1015±0.5exp(0.07±0.1eV∕kT)cm−3atm−1, respectively. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2770796 |