High efficiency InGaAs solar cells on Si by InP layer transfer

In P ∕ Si substrates were fabricated through wafer bonding and helium-induced exfoliation of InP, and InGaAs solar cells lattice matched to bulk InP were grown on these substrates using metal-organic chemical-vapor deposition. The photovoltaic characteristics of the InGaAs cells fabricated on the wafer-bonded In P ∕ Si substrates were comparable to those synthesized on commercially available epiready InP substrates, thus providing a demonstration of wafer-bonded In P ∕ Si substrates as an alternative to bulk InP substrates for solar cell applications.