Polyacrylonitrile as a gate dielectric material

A soluble organic material, polyacrylonitrile (PAN), was investigated for its feasibility of gate dielectric applications. The solution-processed PAN was spin coated in air. Results show that leakage current density as low as 0.3 nA ∕ cm 2 for 50 nm PAN dielectrics could be achieved via process optimization. Functional transistor characteristics were achieved in air for the implementation of PAN in organic thin-film transistors using pentacene or poly(3-hexylthiophene) as a semiconductor material.