Dynamic and temperature effects in toggle magnetic random access memory

In this paper we have studied the dynamic switching in magnetic random access memory (MRAM) and its dependence on thermal effects due to a finite temperature. The model is based on the Landau-Lifshitz-Gilbert equation and the stochastic Landau-Lifshitz-Gilbert equation which are numerically integrat...

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Veröffentlicht in:Journal of applied physics 2007-07, Vol.102 (1)
Hauptverfasser: Cimpoesu, Dorin, Stancu, Alexandru, Spinu, Leonard
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper we have studied the dynamic switching in magnetic random access memory (MRAM) and its dependence on thermal effects due to a finite temperature. The model is based on the Landau-Lifshitz-Gilbert equation and the stochastic Landau-Lifshitz-Gilbert equation which are numerically integrated. The magnetic layers are assumed to be ellipsoid shaped with each magnetic layer single domain. In addition, we have taken into account the uniaxial intrinsic anisotropy. Simulations were performed for both balanced and nonbalanced synthetic antiferromagnetic elements. The switching properties are discussed as a function of applied field pulses’ length and shape. In this paper we present how the thermal fluctuations affect the switching behavior, the reliability, and the writing speed of MRAM devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2752138