Origin of colossal dielectric response of CaCu3Ti4O12 studied by using CaTiO3∕CaCu3Ti4O12∕CaTiO3 multilayer thin films
To elucidate the origin of the colossal dielectric response (CDR) of CaCu3Ti4O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTiO3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measure...
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Veröffentlicht in: | Applied physics letters 2007-06, Vol.90 (24) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | To elucidate the origin of the colossal dielectric response (CDR) of CaCu3Ti4O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTiO3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329–435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2748854 |