Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

The device physics of the double-gate tunneling field-effect transistor (DG TFET) is explored through two dimensional device simulations. The on-state drain current I on of the DG TFET, which is based on band-to-band tunneling, has a strong dependence on the silicon film thickness T Si and the physi...

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Veröffentlicht in:	Applied physics letters 2007-06, Vol.90 (26), p.263507-263507-3
Hauptverfasser:	Toh, Eng-Huat, Wang, Grace Huiqi, Samudra, Ganesh, Yeo, Yee-Chia
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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