Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
The thermodynamic properties and interfacial characteristics of HfO2 thin films that were deposited by the direct plasma atomic layer deposition (DPALD) method are investigated. The as-deposited HfO2 films that were deposited by the DPALD method show crystallization of the HfO2 layers, which initiat...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2007-05, Vol.90 (22) |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The thermodynamic properties and interfacial characteristics of HfO2 thin films that were deposited by the direct plasma atomic layer deposition (DPALD) method are investigated. The as-deposited HfO2 films that were deposited by the DPALD method show crystallization of the HfO2 layers, which initiates at approximately the 35th cycle (about 2.8nm) of the DPALD process. Medium-energy ion scattering analysis reveals that the direct O2 plasma causes a compositional change in the interfacial layer as the process progresses. With an increase in the number of process cycles, the Si content decreases and the O content increases at that position, so that the HfO2-like Hf-silicate layer is formed on top of the interfacial layer. The enhanced physical reactivity of the oxygen ions in the direct plasma and the Hf-silicate layer may be the driving forces that accelerate the early crystallization of the HfO2 layer in the DPALD process in the as-deposited state. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2743749 |