Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer
The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs ∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with Ga As 0.75 Sb 0.25 exhibit a full pyramidal shape and a height more than twice that o...
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| Veröffentlicht in: | Applied physics letters 2007-05, Vol.90 (21), p.213105-213105-3 |
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| container_end_page | 213105-3 |
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| container_title | Applied physics letters |
| container_volume | 90 |
| creator | Ulloa, J. M. Drouzas, I. W. D. Koenraad, P. M. Mowbray, D. J. Steer, M. J. Liu, H. Y. Hopkinson, M. |
| description | The influence of a GaAsSb capping layer on the structural properties of self-assembled
InAs
∕
GaAs
quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with
Ga
As
0.75
Sb
0.25
exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer. |
| doi_str_mv | 10.1063/1.2741608 |
| format | Article |
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InAs
∕
GaAs
quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with
Ga
As
0.75
Sb
0.25
exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2741608</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-05, Vol.90 (21), p.213105-213105-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c309t-2d0c8ea627995c467e91bc1d38cd86b4b86bc6320a586c400fa33872ab33ff613</citedby><cites>FETCH-LOGICAL-c309t-2d0c8ea627995c467e91bc1d38cd86b4b86bc6320a586c400fa33872ab33ff613</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2741608$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76127,76133</link.rule.ids></links><search><creatorcontrib>Ulloa, J. M.</creatorcontrib><creatorcontrib>Drouzas, I. W. D.</creatorcontrib><creatorcontrib>Koenraad, P. M.</creatorcontrib><creatorcontrib>Mowbray, D. J.</creatorcontrib><creatorcontrib>Steer, M. J.</creatorcontrib><creatorcontrib>Liu, H. Y.</creatorcontrib><creatorcontrib>Hopkinson, M.</creatorcontrib><title>Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer</title><title>Applied physics letters</title><description>The influence of a GaAsSb capping layer on the structural properties of self-assembled
InAs
∕
GaAs
quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with
Ga
As
0.75
Sb
0.25
exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kL9OwzAQhy0EEqUw8AZeGVLOucRxxqqCUqkSQ2GOHMeGoDY2tjvkDXgBXpAnIW0zsLDcH-n7nU4fIbcMZgw43rNZWmSMgzgjEwZFkSBj4pxMAAATXubsklyF8DGseYo4IXqzd87rEFrbUWvoqpsH-vP1TZdyGD73sov7HW1spI1WdudsaOMBrXsa3zVtO2W9s17GMS-PwU1NlXSu7d7oVvbaX5MLI7dB34x9Sl4fH14WT8n6eblazNeJQihjkjaghJY8LcoyVxkvdMlqxRoUqhG8zuqhKI4pyFxwlQEYiSiKVNaIxnCGU3J3uqu8DcFrUznf7qTvKwbVwU_FqtHPwIoTG1Qbj___D_-RVFmDv7jSbAM</recordid><startdate>20070521</startdate><enddate>20070521</enddate><creator>Ulloa, J. M.</creator><creator>Drouzas, I. W. D.</creator><creator>Koenraad, P. M.</creator><creator>Mowbray, D. J.</creator><creator>Steer, M. J.</creator><creator>Liu, H. Y.</creator><creator>Hopkinson, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070521</creationdate><title>Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer</title><author>Ulloa, J. M. ; Drouzas, I. W. D. ; Koenraad, P. M. ; Mowbray, D. J. ; Steer, M. J. ; Liu, H. Y. ; Hopkinson, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c309t-2d0c8ea627995c467e91bc1d38cd86b4b86bc6320a586c400fa33872ab33ff613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ulloa, J. M.</creatorcontrib><creatorcontrib>Drouzas, I. W. D.</creatorcontrib><creatorcontrib>Koenraad, P. M.</creatorcontrib><creatorcontrib>Mowbray, D. J.</creatorcontrib><creatorcontrib>Steer, M. J.</creatorcontrib><creatorcontrib>Liu, H. Y.</creatorcontrib><creatorcontrib>Hopkinson, M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ulloa, J. M.</au><au>Drouzas, I. W. D.</au><au>Koenraad, P. M.</au><au>Mowbray, D. J.</au><au>Steer, M. J.</au><au>Liu, H. Y.</au><au>Hopkinson, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer</atitle><jtitle>Applied physics letters</jtitle><date>2007-05-21</date><risdate>2007</risdate><volume>90</volume><issue>21</issue><spage>213105</spage><epage>213105-3</epage><pages>213105-213105-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The influence of a GaAsSb capping layer on the structural properties of self-assembled
InAs
∕
GaAs
quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with
Ga
As
0.75
Sb
0.25
exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2741608</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2007-05, Vol.90 (21), p.213105-213105-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2741608 |
| source | American Institute of Physics (AIP) Journals; AIP Digital Archive |
| title | Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer |
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