Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer
The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs ∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with Ga As 0.75 Sb 0.25 exhibit a full pyramidal shape and a height more than twice that o...
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Veröffentlicht in: | Applied physics letters 2007-05, Vol.90 (21), p.213105-213105-3 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The influence of a GaAsSb capping layer on the structural properties of self-assembled
InAs
∕
GaAs
quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with
Ga
As
0.75
Sb
0.25
exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2741608 |