Suppression of InAs ∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs ∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with Ga As 0.75 Sb 0.25 exhibit a full pyramidal shape and a height more than twice that o...

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Veröffentlicht in:Applied physics letters 2007-05, Vol.90 (21), p.213105-213105-3
Hauptverfasser: Ulloa, J. M., Drouzas, I. W. D., Koenraad, P. M., Mowbray, D. J., Steer, M. J., Liu, H. Y., Hopkinson, M.
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Sprache:eng
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Zusammenfassung:The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs ∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with Ga As 0.75 Sb 0.25 exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2741608