Epitaxial growth of sol-gel derived BiScO3–PbTiO3 thin film on Nb-doped SrTiO3 single crystal substrate

Bi Sc O 3 – Pb Ti O 3 (BSPT) thin film was grown on electrical conductive Nb-doped SrTiO3 (100) (Nb-STO) single crystal substrate by a sol-gel method. The x-ray diffraction and high resolution transmission electron microscopy proved the epitaxial growth relation between the BSPT thin film and Nb-STO substrate. The [001]-epitaxial BSPT thin film exhibited considerable high remanent polarization of 74μC∕cm2 and effective piezoelectric coefficient d33* of 130pm∕V, which were much higher than those of the (100)-oriented BSPT thin film grown on traditional silicon substrate.