Enhanced light extraction of GaN-based light-emitting diodes by using textured n -type GaN layers
The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n -type layers. Compared with standard LEDs, LED fabricated with the textured n -type layers produced a significant improvement in the output power, depending on th...
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Veröffentlicht in: | Applied physics letters 2007-04, Vol.90 (16), p.161110-161110-3 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of
n
-type layers. Compared with standard LEDs, LED fabricated with the textured
n
-type layers produced a significant improvement in the output power, depending on the reflectivity of the
n
electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2724903 |