Enhanced light extraction of GaN-based light-emitting diodes by using textured n -type GaN layers

The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n -type layers. Compared with standard LEDs, LED fabricated with the textured n -type layers produced a significant improvement in the output power, depending on th...

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Veröffentlicht in:Applied physics letters 2007-04, Vol.90 (16), p.161110-161110-3
Hauptverfasser: Kim, Hyunsoo, Cho, Jaehee, Lee, Jeong Wook, Yoon, Sukho, Kim, Hyungkun, Sone, Cheolsoo, Park, Yongjo, Seong, Tae-Yeon
Format: Artikel
Sprache:eng
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Zusammenfassung:The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n -type layers. Compared with standard LEDs, LED fabricated with the textured n -type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2724903