Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes
Exceptionally low-voltage operation of organic ferroelectric capacitors and diodes was demonstrated. Ferroelectric polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] thin films were prepared by the solvent-cast method. Metal-ferroelectric-metal capacitors with 60 - nm -thick P(VDF-TrFE) films e...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2007-04, Vol.90 (16), p.162902-162902-3 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Exceptionally low-voltage operation of organic ferroelectric capacitors and diodes was demonstrated. Ferroelectric polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] thin films were prepared by the solvent-cast method. Metal-ferroelectric-metal capacitors with
60
-
nm
-thick P(VDF-TrFE) films exhibited well-saturated hysteresis curves whose coercive voltage
(
V
c
)
and remanent polarization
(
P
r
)
were
2.0
V
and
11.9
μ
C
∕
cm
2
, respectively. The authors also fabricated metal-ferroelectric-insulator-semiconductor diodes with
100
-
nm
-thick P(VDF-TrFE) films. Rectangular-shaped capacitance-voltage
(
C
-
V
)
hysteresis loops were obtained with a voltage sweep range narrower than
5
V
. The maximum memory window of
4.7
V
was achieved. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2723678 |