Free carrier distribution profiling of 4H-SiC substrates using a commercial optical scanner

Presented here is an explanation for the use of a commercial optical scanner for the mapping of doping density ( N D ) within SiC substrates and as a local probe for N D variations. This method provides a fast and cost effective method for determining N D homogeneity, examining local electrical char...

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Veröffentlicht in:	Journal of applied physics 2007-05, Vol.101 (9), p.093506-093506-7
Hauptverfasser:	Caldwell, Joshua D., Glembocki, Orest J., Prokes, Sharka M., Glaser, Evan R., Hobart, Karl D., Hansen, Darren M., Chung, Gilyong, Bolotnikov, Alexander V., Sudarshan, Tangali S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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