Free carrier distribution profiling of 4H-SiC substrates using a commercial optical scanner

Presented here is an explanation for the use of a commercial optical scanner for the mapping of doping density ( N D ) within SiC substrates and as a local probe for N D variations. This method provides a fast and cost effective method for determining N D homogeneity, examining local electrical characteristics, and recognizing defect sites including areas of different polytypes or polycrystallinity. Hall effect and micro-Raman spectroscopy were used to calibrate the transmission amplitude, integrated area and scanner red, green, blue ( RGB ) luminance values with N D . It is shown that features presented in the calculated N D maps strongly correlate to those observed in Lehighton resistivity maps.