Reduced surface electron accumulation at InN films by ozone induced oxidation

A room temperature ozone induced oxidation of thin InN films is proposed to improve the electric transport properties. The sheet carrier density is reduced upon oxidation by a value which is in the order of the electron concentration of an untreated InN surface. Thus, ozone effectively passivates th...

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Veröffentlicht in:Applied physics letters 2007-04, Vol.90 (15)
Hauptverfasser: Cimalla, V., Lebedev, V., Wang, Ch. Y., Ali, M., Ecke, G., Polyakov, V. M., Schwierz, F., Ambacher, O., Lu, H., Schaff, W. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:A room temperature ozone induced oxidation of thin InN films is proposed to improve the electric transport properties. The sheet carrier density is reduced upon oxidation by a value which is in the order of the electron concentration of an untreated InN surface. Thus, ozone effectively passivates the surface defect states on InN and might be an effective method to prepare InN films for electronic applications. A model for the improved electron transport properties is proposed taking into account the decreased surface band bending and the decreased influence of surface electrons on the net mobility of InN layers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2721365