Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress

The authors present direct evidence for Te segregation to the grain boundaries in chalcogenide Ge2Sb2Te5 films by using transmission electron microscopy scans with a 0.5nm diameter focused probe. This finding is consistent with the observed impeded grain growth and with the post-transition relief of...

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Veröffentlicht in:	Applied physics letters 2007-04, Vol.90 (14)
Hauptverfasser:	Krusin-Elbaum, L., Cabral, C., Chen, K. N., Copel, M., Abraham, D. W., Reuter, K. B., Rossnagel, S. M., Bruley, J., Deline, V. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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