Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress
The authors present direct evidence for Te segregation to the grain boundaries in chalcogenide Ge2Sb2Te5 films by using transmission electron microscopy scans with a 0.5nm diameter focused probe. This finding is consistent with the observed impeded grain growth and with the post-transition relief of...
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Veröffentlicht in: | Applied physics letters 2007-04, Vol.90 (14) |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The authors present direct evidence for Te segregation to the grain boundaries in chalcogenide Ge2Sb2Te5 films by using transmission electron microscopy scans with a 0.5nm diameter focused probe. This finding is consistent with the observed impeded grain growth and with the post-transition relief of a “spikelike” stress, fully to the pretransition level. Te motion shows up in void formation below 200°C, a pileup of Te at the surface and its loss at higher (above 400°C) temperatures. Tuning the driving force for this segregation may be key for the optimal phase-change material design. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2719148 |