Investigation of local charged defects within high-temperature annealed HfSiON∕SiO2 gate stacks by scanning capacitance spectroscopy
We studied the oxide charges and traps within nitrided Hf-silicate (HfSiON)∕SiO2 gate stacks processed with high-temperature annealing with a spectroscopic technique by using high spatial resolution scanning capacitance microscopy. Spectroscopy was performed by detecting the static capacitance (dC∕d...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2007-04, Vol.101 (8) |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We studied the oxide charges and traps within nitrided Hf-silicate (HfSiON)∕SiO2 gate stacks processed with high-temperature annealing with a spectroscopic technique by using high spatial resolution scanning capacitance microscopy. Spectroscopy was performed by detecting the static capacitance (dC∕dZ) between a conductive probe and the sample while sweeping the sample bias. The dC∕dZ image and spatially resolved dC∕dZ-V spectrum revealed the existence of positive fixed charges within HfSiON and interface trap charges between the SiO2 underlayer and Si substrate. We also observed a transient electron trap process from the conductive probe to the HfSiON film as abrupt discontinuities in the dC∕dZ-V spectrum and with bias-induced topography change of the HfSiON surface. These oxide charges and trap sites distribute inhomogeneously within HfSiON∕SiO2 gate stacks, and the origin of these charged defects is ascribable to phase separation induced by high-temperature postdeposition annealing. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.2717600 |