Assembly of one-dimensional nanorods into Bi2S3 films with enhanced thermoelectric transport properties

Bismuth sulfide thin films have been assembled by cross-linkage nanorods on surface-functionalized Si substrate with self-assembled monolayers. Results of transmission electron microscopy and electron diffraction revealed that highly crystalline Bi2S3 nanorods grow along c-axis direction. Electrical...

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Veröffentlicht in:Applied physics letters 2007-03, Vol.90 (11)
Hauptverfasser: Liufu, Sheng-Cong, Chen, Li-Dong, Yao, Qin, Wang, Chun-Fen
Format: Artikel
Sprache:eng
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Zusammenfassung:Bismuth sulfide thin films have been assembled by cross-linkage nanorods on surface-functionalized Si substrate with self-assembled monolayers. Results of transmission electron microscopy and electron diffraction revealed that highly crystalline Bi2S3 nanorods grow along c-axis direction. Electrical transport properties including resistivity (0.02Ωcm), thermopower (−755μVK−1), and carrier mobilities (1100cm2V−1s−1) of the Bi2S3 films at 300K are found superior to those of previously reported Bi2S3 samples. The Bi2S3 films exhibit a maximum thermoelectric power factor (3.97×10−3Wm−1K−2) at 450K. The enhancement of thermoelectric properties mainly originates from highly crystalline and oriented nanostructures embedded in the Bi2S3 films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2712504