Heat treatment of metal-capped SiO2 films containing Si nanocrystals

Heat treatment of metal-capped SiO2 films containing Si nanocrystals

SiO 2 films containing Si nanocrystals and capped with different metal layers (Al, Pd, and Pt) were annealed in a gas containing hydrogen and subsequently studied by photoluminescence (PL). All metal layers were found to greatly increase the photoluminescence from the Si nanocrystals. However, the P...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2007-03, Vol.101 (5)
Hauptverfasser: Jensen, J. Skov, Buttenschön, D. A., Pedersen, T. P. Leervad, Chevallier, J., Nielsen, B. Bech, Larsen, A. Nylandsted
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:SiO 2 films containing Si nanocrystals and capped with different metal layers (Al, Pd, and Pt) were annealed in a gas containing hydrogen and subsequently studied by photoluminescence (PL). All metal layers were found to greatly increase the photoluminescence from the Si nanocrystals. However, the Pt layer was found to be the most efficient giving rise to a PL increase of 32 times as compared to that of an untreated film.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2710434