Low frequency noise characterizations of ZnO nanowire field effect transistors

We fabricated ZnO nanowire field effect transistors (FETs) and systematically characterized their low frequency ( f ) noise properties. The obtained noise power spectra showed a classical 1 ∕ f dependence. A Hooge's constant of 5 × 10 − 3 was estimated from the gate dependence of the noise amplitude. This value is within the range reported for complementary metal-oxide semiconductor (CMOS) FETs with high- k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O 2 environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O 2 − on the nanowire surfaces.