High TC ferromagnetism of Zn(1−x)CoxO diluted magnetic semiconductors grown by oxygen plasma-assisted molecular beam epitaxy

Co-doped wurtzite ZnO [Zn(1−x)CoxO] thin films have been grown on Al2O3(0001) substrates by using oxygen plasma-assisted molecular beam epitaxy at the low growth temperature of 450°C. The epitaxial films of Co concentration at 0⩽x⩽0.12 are single crystalline, which were examined by reflection high e...

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Veröffentlicht in:Applied physics letters 2007-01, Vol.90 (5)
Hauptverfasser: Liu, G. L., Cao, Q., Deng, J. X., Xing, P. F., Tian, Y. F., Chen, Y. X., Yan, S. S., Mei, L. M.
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Sprache:eng
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Zusammenfassung:Co-doped wurtzite ZnO [Zn(1−x)CoxO] thin films have been grown on Al2O3(0001) substrates by using oxygen plasma-assisted molecular beam epitaxy at the low growth temperature of 450°C. The epitaxial films of Co concentration at 0⩽x⩽0.12 are single crystalline, which were examined by reflection high energy electron diffraction and x-ray diffraction. Both of optical transmission spectrum and in situ. x-ray photoelectron spectroscopy studies confirmed the incorporation of Co2+ cations into wurtzite ZnO lattice. Magnetic measurements revealed that the Zn(1−x)CoxO thin films are ferromagnetic with Curie temperature TC above room temperature, and the ferromagnetism shows intrinsic characteristic.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2437111