Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors

Specific treatments of the base surface of InGaP∕GaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors nC and nB, and wider collector current operating regimes over the measured temperature range (300–400K). Therefore, the dual surface treatment method provides promise for high-performance electronic applications.